Pure $Si$ at $500\ K$ has equal number of electron $(n_{e})$ and hole $(n_{h})$ concentrations of $1.5 imes 10^{16}m^{- 3}$. Doping by indium increases $n_{h}$ to $4.5 imes 10^{22}m^{- 3}$. The doped semiconductor is of

Question

Pure $Si$ at $500\ K$ has equal number of electron $(n_{e})$ and hole $(n_{h})$ concentrations of $1.5 	imes 10^{16}m^{- 3}$. Doping by indium increases $n_{h}$ to $4.5 	imes 10^{22}m^{- 3}$. The doped semiconductor is of

Dr. Abubacker · Accepted Answer

(b) $n_{i}^{2} = n_{e}n_{h}$
$\left( 1.5 	imes 10^{16} ight)^{2} = n_{e}(4.5 	imes 10^{22})$
$n_{e} = 0.5 	imes 10^{10} = 5 	imes 10^{9}$
$n_{h} = 4.5 	imes 10^{22}$
$n_{h} \gg n_{e}$
Semiconductor is $p$-type and $n_{e} = 5 	imes 10^{9}m^{- 3}$

Q. Pure $Si$ at $500\ K$ has equal number of electron $(n_{e})$ and hole $(n_{h})$ concentrations of $1.5 \times 10^{16}m^{- 3}$. Doping by indium increases $n_{h}$ to $4.5 \times 10^{22}m^{- 3}$. The doped semiconductor is of

Explanation

Reviewed by Dr. Abubacker

Want more practice?