Q. The dominant mechanism for motion of charge carriers in forward and reverse biased silicon $P$-$N$ junctions are
A) Drift in forward bias, diffusion in reverse bias
B) Diffusion in forward bias, drift in reverse bias
C) Diffusion in both forward and reverse bias
D) Drift in both forward and reverse bias
Explanation
(b) In forward biasing the diffusion current increases and drift current remains constant so not current is due to the diffusion
In reverse biasing diffusion becomes more difficult so net current (very small) is due to the drift
Reviewed by Dr. Abubacker
Physics Educator & NEET/JEE Specialist
Ph.D. in Physics with 19+ years of teaching experience.