Q. Consider the following statements $A$ and $B$ and identify the correct choice of the given answers $A$. The width of the depletion layer in a $P$-$N$ junction diode increases in forward bias $B$. In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap
A) $A$ is true and $B$ is false
B) Both $A$ and $B$ are false
C) $A$ is false and $B$ is true
D) Both $A$ and $B$ are true
Explanation
(c) In forward biasing of $PN$ junction diode width of depletion layer decreases. In intrinsic semiconductor fermi energy level is exactly in the middle of the forbidden gap
[image:14_image235.png]
Reviewed by Dr. Abubacker
Physics Educator & NEET/JEE Specialist
Ph.D. in Physics with 19+ years of teaching experience.