Q. When p-n junction diode is forward biased then

A) The depletion region is reduced and barrier height is increased
B) The depletion region is widened and barrier height is reduced
C) Both the depletion region and barrier height are reduced
D) Both the depletion region and barrier height are increased
Explanation

(c) When $p$-end of p-n junction is connected to positive terminal of battery and $n$-end to negative terminal of battery, then p-n junction is said to be in forward bias. In forward bias, the more numbers of electrons go from $n$-region to $p$-region and more number of holes go from $p$-region to$\ n$-region. Therefore, major current due to both types of carriers takes place through the junction causing, more recombination of electron hole pairs thus causing reduction in height of depletion region and barrier potential.

Dr. Abubacker
Reviewed by Dr. Abubacker

Physics Educator & NEET/JEE Specialist

Ph.D. in Physics with 19+ years of teaching experience.