Q. The reverse saturation of $p$-$n$ diode
A) Depends on doping concentrations
B) Depends on diffusion lengths of carriers
C) Depends on the doping concentrations and diffusion lengths
D) Depends on the doping concentrations, diffusion length and device temperature
Explanation
(d) The reverse saturation of $p$-$n$ diode depends on doping concentrations, diffusion length and device temperature.
Reviewed by Dr. Abubacker
Physics Educator & NEET/JEE Specialist
Ph.D. in Physics with 19+ years of teaching experience.