You are using light of wavelength 1400 nm in a photodetector. Which of the following semiconductor is to be used having band gap as? $(h = 6.63 imes 10^{- 34}Js;c = 3 imes 10^{8}ms^{- 1})$

Question

You are using light of wavelength 1400 nm in a photodetector. Which of the following semiconductor is to be used having band gap as? $(h = 6.63 	imes 10^{- 34}Js;c = 3 	imes 10^{8}ms^{- 1})$

Dr. Abubacker · Accepted Answer

(a) $E_{g} = \frac{hc}{\lambda} = \frac{\left( 6.63 	imes 10^{- 34} ight) 	imes (3 	imes 10^{8})}{\left( {1400 	imes 10}^{- 9} ight) 	imes (1.6 	imes 10^{- 19})} = 1\ eV$

Q. You are using light of wavelength 1400 nm in a photodetector. Which of the following semiconductor is to be used having band gap as? $(h = 6.63 \times 10^{- 34}Js;c = 3 \times 10^{8}ms^{- 1})$

Explanation

Reviewed by Dr. Abubacker

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